FDD8778 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 25V, 35A, 14mohm

May 2006
FDD8778/FDU8778
N-Channel PowerTrench^® MOSFET
tm
25V, 35A, 14mΩ
Features
General Description
„ Max r_DS(on) = 14.0mΩ at V_GS = 10V, I_D = 35A
„ Max r_DS(on) = 21.0mΩ at V_GS = 4.5V, I_D = 33A
„ Low gate charge: Q_g(TOT) = 12.6nC(Typ), V_GS = 10V
„ Low gate resistance
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
„ RoHS compliant
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Application
„ DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
D
G
G DS
I-PAK
S
(TO-251AA)
Short Lead I-PAK
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
I_D
-Continuous (Die Limited)
-Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
R_θJC
Thermal Resistance, Junction to Case TO-252,TO-251
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in² copper pad area
Package Marking and Ordering Information
Device Marking
FDD8778
FDU8778
FDU8778
Device
FDD8778
FDU8778
FDU8778_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A(Tube)
N/A(Tube)
©2006 Fairchild Semiconductor Corporation
1
FDD8778/FDU8778 Rev. A
Ratings
25
±20
35
40
145
24
39
-55 to 175
Units
V
V
A
mJ
W
°C
3.8
°C/W
100
°C/W
52
°C/W
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
www.fairchildsemi.com