FDD8750 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm

December 2006
FDD8750
N-Channel PowerTrench^® MOSFET
tm
25V, 2.7A, 40mΩ
Features
General Description
„ Max r_DS(on) = 40mΩ at V_GS = 10V, I_D = 2.7A
„ Max r_DS(on) = 60mΩ at V_GS = 4.5V, I_D = 2.7A
„ Low gate charge: Q_g(10) = 6nC(Typ)
„ Low gate resistance
„ Avalanche rated and 100% tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall effciency of DC/DC converters using either
synchronous or conventional switching PWM controllers.It has
been optimized for low gate charge, low r_DS(on) and fast
switching speed.
Application
„ Low current DC-DC switching
„ Linear regulation
D
D
G
S
G
D_{T O}- P_-2A₅K₂
(T O -25 2)
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
-Continuous(Silicon Limited)
-Continuous
-Pulsed
T_C= 25°C
T_C= 25°C
T_A= 25°C
Drain-Source Avalanche Energy
Power Dissipation
Power Dissipation
T_C= 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
S
Ratings
25
±20
2.7
16
6.5
14
19
18
3.7
–55 to +175
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
8
(Note 1a)
40
°C/W
Device Marking
FDD8750
Device
FDD8750
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDD8750 Rev.C
www.fairchildsemi.com