FDD86540 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ

FDD86540
N-Channel PowerTrench^® MOSFET
60 V, 50 A, 4.1 mΩ
February 2012
Features
General Description
„ Max r_DS(on) = 4.1 mΩ at V_GS = 10 V, I_D = 21.5 A
„ Max r_DS(on) = 5 mΩ at V_GS = 8 V, I_D = 19.5 A
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r_DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary Switch in isolated DC-DC
„ Synchronous Rectifier
„ Load Switch
D
D
G
S
D_{T O}-P_-2A₅K₂
(T O -25 2)
G
S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
136
21.5
120
228
127
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
0.98
(Note 1a)
40
°C/W
Device Marking
FDD86540
Device
FDD86540
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
1
FDD86540 Rev. C
www.fairchildsemi.com