FDD86367_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Automotive Engine Control

FDD86367_F085
N-Channel PowerTrench^® MOSFET
80 V, 100 A, 4.2 mΩ
May 2015
Features
„ Typical R_DS(on) = 3.3 mΩ at V_GS = 10V, I_D = 80 A
„ Typical Q_g(tot) = 68 nC at V_GS = 10V, I_D = 80 A
„ UIS Capability
„ RoHS Compliant
„ Qualified to AEC Q101
Applications
„ Automotive Engine Control
„ PowerTrain Management
„ Solenoid and Motor Drivers
„ Integrated Starter/Alternator
„ Primary Switch for 12V Systems
D
D
G
G
S
D_TO-P_-2A₅K₂
(TO-252)
S
For current package drawing, please refer to the Fairchild web‐
site at http://www.fairchildsemi.com/package‐drawings/TO/
TO252A03.pdf.
MOSFET Maximum Ratings T_J = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
V_GS
I_D
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current - Continuous (V_GS=10) (Note 1)
Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Derate Above 25^oC
T_J, T_STG Operating and Storage Temperature
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Maximum Thermal Resistance, Junction to Ambient
T_C = 25°C
T_C = 25°C
(Note 2)
(Note 3)
Ratings
80
±20
100
See Figure 4
82
227
1.52
-55 to + 175
0.66
52
Units
V
V
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting T_J = 25°C, L = 40μH, I_AS = 64A, V_DD = 80V during inductor charging and V_DD = 0V during time in avalanche.
3: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface
presented here is
of the
based
drain pins. R_θJC is
on mounting on a 1
guaranteed by design,
in² pad of 2oz copper.
while
R_θJAis
determined
by
the
board
design.
The maximum rating
Package Marking and Ordering Information
Device Marking
FDD86367
Device
FDD86367_F085
Package
D-PAK(TO-252)
Reel Size
13”
Tape Width
16mm
Quantity
2500units
©2015 Fairchild Semiconductor Corporation
1
FDD86367_F085 Rev. 1.0
www.fairchildsemi.com