FDD86110 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 50 A, 10.2 mΩ

October 2011
FDD86110
N-Channel PowerTrench^® MOSFET
100 V, 50 A, 10.2 mΩ
Features
General Description
„ Max r_DS(on) = 10.2 mΩ at V_GS = 10 V, I_D = 12.5 A
„ Max r_DS(on) = 16 mΩ at V_GS = 6 V, I_D = 9.8 A
„ 100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ RoHS Compliant
Application
„ DC - DC Conversion
D
G
S
D
D_{T O}-P_-2A₅K₂
(T O -25 2)
G
S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
50
80
12.5
60
135
127
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
0.98
(Note 1a)
40
°C/W
Device Marking
FDD86110
Device
FDD86110
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDD86110 Rev.C
www.fairchildsemi.com