FDD8586 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM

January 2007
FDD8586/FDU8586
tm
N-Channel PowerTrench^® MOSFET
20V, 35A, 5.5mΩ
Features
General Description
„ Max r_DS(on) = 5.5mΩ at V_GS = 10V, I_D = 35A
„ Max r_DS(on) = 8.5mΩ at V_GS = 4.5V, I_D = 33A
„ Low gate charge: Q_g(TOT) = 34nC(Typ), V_GS = 10V
„ Low gate resistance
„ 100% Avalanche tested
„ RoHS compliant
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
Application
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G DS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
I_D
-Continuous (Die Limited)
-Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
R_θJC
Thermal Resistance, Junction to Case TO-252,TO-251
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in² copper pad area
Package Marking and Ordering Information
Device Marking
FDD8586
FDU8586
Device
FDD8586
FDU8586
Package
TO-252AA
TO-251AA
Reel Size
13’’
N/A(Tube)
G
S
Ratings
20
±20
35
93
354
144
77
-55 to 175
Units
V
V
A
mJ
W
°C
1.94
°C/W
100
°C/W
52
°C/W
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2007 Fairchild Semiconductor Corporation
1
FDD8586/FDU8586 Rev. B
www.fairchildsemi.com