FDD850N10L Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 m Ohm

March 2013
FDD850N10L
N-Channel PowerTrench^® MOSFET
100 V, 15.7 A, 75 mΩ
Features
• R_DS(on) = 61 mΩ ( Typ.) @ V_GS = 10 V, I_D = 12 A
• R_DS(on) = 64 mΩ ( Typ.) @ V_GS = 5 V, I_D = 12 A
• Low Gate Charge ( Typ. 22.2 nC)
• Low C_rss ( Typ. 42 pF)
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor^®’s advanced PowerTrench^® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Consumer Appliances
• LED TV and Monitor
• Uninterruptible Power Supply
• Micro Solar Inverter
D
D
GS
D-PAK
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1)
(Note 2)
(Note 3)
FDD850N10L
100
±20
15.7
11.1
63
41
6.0
50
0.33
-55 to +175
300
FDD850N10L
3.0
87
Unit
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FDD850N10L Rev. C0
www.fairchildsemi.com