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| FDD8453LZ_F085_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 40V, 50A, 6.5mΩ | |||
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FDD8453LZ_F085
N-Channel Power Trench® MOSFET
40V, 50A, 6.5mΩ
Aug 2012
Features
 Typ rDS(on) = 5mΩ at VGS = 10V, ID = 15A
 Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A
 HBM ESD protection level > 7kv typical
 RoHS Compliant
 Qualified to AEC Q101
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced PowerTrench® process that
has been especially tailored to minimize the on-state
resistance and switching loss. G-S zener has been added
to enhance ESD voltage level.
Applications
 Inverter
 Synchronous Rectifier
Package
D
G
S
D-PAK
(TO-252)
©2012 Fairchild Semiconductor Corporation
FDD8453LZ_F085 Rev. C1
Symbol
D
G
S
1
www.fairchildsemi.com
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