FDD8453LZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ

FDD8453LZ
N-Channel PowerTrench^® MOSFET
40V, 50A, 6.7mΩ
Features
„ Max r_DS(on) = 6.7mΩ at V_GS = 10V, I_D = 15A
„ Max r_DS(on) = 8.7mΩ at V_GS = 4.5V, I_D = 13A
„ HBM ESD protection level >7kV typical (Note 4)
„ RoHS Compliant
September 2007
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
„ Inverter
„ Synchronous Rectifier
D
G
S
D
D_{T O}- P_-2A₅K₂
(TO-252)
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
50
75
16.4
100
253
65
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.9
(Note 1a)
40
°C/W
Device Marking
FDD8453LZ
Device
FDD8453LZ
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
1
FDD8453LZ Rev.C
www.fairchildsemi.com