FDD8451_08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

March 2008
FDD8451
N-Channel PowerTrench^® MOSFET
tm
40V, 28A, 24mΩ
Features
General Description
„ Max r_DS(on) = 24mΩ at V_GS = 10V, I_D = 9A
„ Max r_DS(on) = 30mΩ at V_GS = 4.5V, I_D = 7A
„ Low gate charge
„ Fast Switching
„ High performance trench technology for extremely low
r_DS(on)
„ RoHS compliant
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This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low r_DS(on).
Application
„ DC/DC converter
„ Backlight inverter
D
G
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current -Continuous @T_C=25°C
I_D
-Continuous @T_A=25°C
-Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
R_θJC
Thermal Resistance, Junction to Case
R_θJA
Thermal Resistance, Junction to Ambient
R_θJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDD8451
Device
FDD8451
Package
D-PAK(TO-252)
Reel Size
13’’
S
Ratings
40
±20
28
9
78
20
37
-55 to 150
Units
V
V
A
mJ
W
°C
4.1
°C/W
40
°C/W
96
°C/W
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDD8451 Rev. B1
www.fairchildsemi.com