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FDD8451 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 40V, 28A, 24mOHM | |||
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April 2006
FDD8451
N-Channel PowerTrench® MOSFET
tm
40V, 28A, 24mâ¦
Features
General Description
 Max rDS(on) = 24m⦠at VGS = 10V, ID = 9A
 Max rDS(on) = 30m⦠at VGS = 4.5V, ID = 7A
 Low gate charge
 Fast Switching
 High performance trench technology for extremely low
rDS(on)
 RoHS compliant
AD FREE I
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low rDS(on).
Application
 DC/DC converter
 Backlight inverter
D
G
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous @TC=25°C
ID
-Continuous @TA=25°C
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Characteristics
(Note 1)
(Note 2)
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDD8451
Device
FDD8451
Package
D-PAK(TO-252)
Reel Size
13ââ
S
Ratings
40
±20
28
9
78
20
37
-55 to 150
Units
V
V
A
mJ
W
°C
4.1
°C/W
40
°C/W
96
°C/W
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDD8451 Rev. B
www.fairchildsemi.com
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