FDD8447L_08 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ

May 2008
FDD8447L
40V N-Channel PowerTrench^® MOSFET
40V, 50A, 8.5mΩ
Features
General Description
„ Max r_DS(on) = 8.5mΩ at V_GS = 10V, I_D = 14A
„ Max r_DS(on) = 11.0mΩ at V_GS = 4.5V, I_D = 11A
„ Fast Switching
„ RoHS Compliant
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench^® technology to
deliver low r_DS(on) and optimized BV_DSS capability to offer
superior performance benefit in the application.
Applications
„ Inverter
„ Power Supplies
D
D
G
S
D_{T O}- P_-2A₅K₂
(T O -25 2)
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
I_S
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
Max Pulse Diode Current
Drain-Source Avalanche Energy
Power Dissipation
T_C= 25°C
T_A= 25°C
T_A= 25°C
Operating and Storage Junction Temperature Range
T_C= 25°C
T_C= 25°C
T_A= 25°C
Thermal Characteristics
G
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
S
Ratings
40
±20
50
57
15.2
100
100
153
44
3.1
1.3
-55 to +150
Units
V
V
A
A
mJ
W
°C
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
2.8
(Note 1a)
40
(Note 1b)
96
°C/W
Device Marking
FDD8447L
Device
FDD8447L
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDD8447L Rev.C3
www.fairchildsemi.com