FDD8424H_11 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ

FDD8424H_F085A
Dual N & P-Channel PowerTrench^® MOSFET
N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
October 2011
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Features
Q1: N-Channel
„ Max r_DS(on) = 24mΩ at V_GS = 10V, I_D = 9.0A
„ Max r_DS(on) = 30mΩ at V_GS = 4.5V, I_D = 7.0A
Q2: P-Channel
„ Max r_DS(on) = 54mΩ at V_GS = -10V, I_D = -6.5A
„ Max r_DS(on) = 70mΩ at V_GS = -4.5V, I_D = -5.6A
„ Fast switching speed
„ Qualified to AEC Q101
„ RoHS Compliant
General Description
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
„ Inverter
„ H-Bridge
D1
D2
D1/D2
G2
S2
G1
S1
G1
S1
Dual DPAK 4L
N-Channel
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
G2
S2
P-Channel
Symbol
V_DS
V_GS
I_D
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package Limited)
- Continuous (Silicon Limited)
- Continuous
- Pulsed
Power Dissipation for Single Operation
E_AS
T_J, T_STG
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
Thermal Characteristics
T_C = 25°C
T_A = 25°C
T_C = 25°C (Note 1)
T_A = 25°C (Note 1a)
T_A = 25°C (Note 1b)
(Note 3)
Q1
Q2
40
-40
±20
±20
20
-20
26
-20
9.0
-6.5
55
-40
30
35
3.1
1.3
29
33
-55 to +150
Units
V
V
A
W
mJ
°C
R_θJC
Thermal Resistance, Junction to Case, Single Operation for Q1
(Note 1)
4.1
R_θJC
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
3.5
Package Marking and Ordering Information
°C/W
Device Marking
FDD8424H
Device
FDD8424H_F085A
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDD8424H_F085A Rev.B1
www.fairchildsemi.com