|
FDD8424H Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET | |||
|
FDD8424H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40V, 20A, 24m⦠P-Channel: -40V, -20A, 54mâ¦
March 2007
tm
Features
Q1: N-Channel
 Max rDS(on) = 24m⦠at VGS = 10V, ID = 9.0A
 Max rDS(on) = 30m⦠at VGS = 4.5V, ID = 7.0A
Q2: P-Channel
 Max rDS(on) = 54m⦠at VGS = -10V, ID = -6.5A
 Max rDS(on) = 70m⦠at VGS = -4.5V, ID = -5.6A
 Fast switching speed
 RoHS Compliant
General Description
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductorâs
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
 Inverter
 H-Bridge
D1
D2
D1/D2
G2
S2
G1
S1
G1
S1
Dual DPAK 4L
N-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
G2
S2
P-Channel
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package Limited)
- Continuous (Silicon Limited)
- Continuous
- Pulsed
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
TC = 25°C
TA = 25°C
TC = 25°C (Note 1)
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
(Note 3)
Q1
Q2
40
-40
±20
±20
20
-20
26
-20
9.0
-6.5
55
-40
30
35
3.1
1.3
29
33
-55 to +150
Thermal Characteristics
Units
V
V
A
W
mJ
°C
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
(Note 1)
4.1
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
3.5
Package Marking and Ordering Information
°C/W
Device Marking
FDD8424H
Device
FDD8424H
Package
TO-252-4L
Reel Size
13â
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
1
FDD8424H Rev.C
www.fairchildsemi.com
|
▷ |