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FDD7N60NZ_10 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel MOSFET 600V, 5.5A, 1.25 | |||
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FDD7N60NZ / FDU7N60NZ
N-Channel MOSFETï
600V, 5.5A, 1.25ï
Features
⢠RDS(on) = 1.05ï ( Typ.)@ VGS = 10V, ID = 2.75A
⢠Low Gate Charge ( Typ. 13nC)
⢠Low Crss ( Typ. 7pF)
⢠Fast Switching
⢠100% Avalanche Tested
⢠Improved dv/dt Capability
⢠ESD Improved Capability
⢠RoHS Compliant
ï
December 2010
UniFET-II ï TM
Description
These N-Channel enhancement mode power field effect ï ï ï ï tran-
sistors are produced using Fairchildâs proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to ï ï ï ï mini-
mize on-state resistance, provide superior switching ï ï ï ï ï perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
D
G
S
D-PAK
G D S I-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
Thermal Characteristics
Symbol
Rï±JC
Rï±JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
FDD7N60NZ/FDU7N60NZ
600
±25
5.5
3.3
ï ï ï (Note 1)
22
ï ï (Note 2)
347
ï (Note 1)
5.5
ï (Note 1)
12.5
ï (Note 3)
10
90
0.7
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDD7N60NZ/FDU7N60NZ
1.4
90
Units
oC/W
©2010 Fairchild Semiconductor Corporation
1
FDD7N60NZ / FDU7N60NZ Rev. A
www.fairchildsemi.com
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