FDD6N50TMF085 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ

FDD6N50 / FDU6N50
N-Channel UniFET^TM MOSFET
500 V, 6 A, 900 mΩ
Features
• R_DS(on) = 900 mΩ (Max.) @ V_GS = 10 V, I_D = 3 A
• Low Gate Charge (Typ. 12.8 nC)
• Low C_rss (Typ. 9 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
November 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
S
D-PAK
GDS
I-PAK
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for
5 Seconds
G
S
FDD6N50TM /
FDD6N50TM_WS /
FDU6N50TU
500
6
3.8
24
±30
270
6
8.9
4.5
89
0.71
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2006 Fairchild Semiconductor Corporation
1
FDD6N50 / FDU6N50 Rev. C1
FDD6N50TM /
FDD6N50TM_WS /
FDU6N50TU
1.4
83
Unit
°C/W
www.fairchildsemi.com