FDD6780A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ

FDD6780A / FDU6780A_F071
N-Channel PowerTrench^® MOSFET
January 2009
25 V, 8.6 mΩ
Features
General Description
„ Max r_DS(on) = 8.6 mΩ at V_GS = 10 V, I_D = 16.4 A
„ Max r_DS(on) = 19.0 mΩ at V_GS = 4.5 V, I_D = 12.2 A
„ 100% UIL test
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r_DS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D-PAK
(TO-252)
D
G
G
D
S
Short-Lead I-PAK
(TO-251AA)
S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
30
48
16.4
100
24
32.6
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
R_θJC
Thermal Resistance, Junction to Case TO-252, TO-251
4.6
R_θJA
Thermal Resistance, Junction to Ambient TO-252
(Note 1a)
40
Package Marking and Ordering Information
°C/W
Device Marking
FDD6780A
FDU6780A
Device
FDD6780A
FDU6780A_F071
Package
D-PAK (TO-252)
TO-251AA
Reel Size
13 ’’
N/A(Tube)
Tape Width
12 mm
N/A
Quantity
2500 units
75 units
©2009 Fairchild Semiconductor Corporation
1
FDD6780A / FDU6780A_F071 Rev.C
www.fairchildsemi.com