FDD6778A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 25 V, 14.0 mΩ

January 2009
FDD6778A
N-Channel PowerTrench^® MOSFET
25 V, 14.0 mΩ
Features
General Description
„ Max r_DS(on) = 14.0 mΩ at V_GS = 10 V, I_D = 10.0 A
„ Max r_DS(on) = 30.0 mΩ at V_GS = 4.5 V, I_D = 9.7 A
„ 100% UIL tested
„ RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized for low gate charge, low r_DS(on) and fast
switching speed.
Applications
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
S
D
D_TO-P_-2A₅K₂
(TO-252)
G
S
MOSFET Maximum Ratings T_C = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25 °C
T_C = 25 °C
T_A = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
10
30
12
50
12
24
3.7
-55 to +175
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
6.2
(Note 1a)
40
°C/W
Device Marking
FDD6778A
Device
FDD6778A
Package
D-PAK (TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
1
FDD6778A Rev.C
www.fairchildsemi.com