FDD6692 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

April 2001
FDD6692/FDU6692
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
• DC/DC converter
• Motor drives
Features
• 54 A, 30 V.
RDS(ON) = 12 mΩ @ VGS = 10 V
RDS(ON) = 14.5 mΩ @ VGS = 4.5 V
• Low gate charge (18 nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Ratings
30
±16
54
162
57
3.8
1.6
-55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.6
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6692
FDD6692
D-PAK (TO-252)
FDU6692
FDU6692
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
75
2001 Fairchild Semiconductor Corporation
FDD/FDU6692 Rev C(W)