FDD6688S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

May 2004
FDD6688S
30V N-Channel PowerTrench^ SyncFET^™
General Description
The FDD6688S is designed to replace a single TO-252
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDD6688S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Motor Drives
Features
• 88 A, 30 V.
R_DS(ON) = 5.1 mΩ @ V_GS = 10 V
R_DS(ON) = 6.3 mΩ @ V_GS = 4.5 V
• Low gate charge (31 nC typical)
• Fast switching
• High performance trench technology for extremely
low R_DS(ON)
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
D
G
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Ratings
30
± 20
88
100
69
3.1
1.3
–55 to +150
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
1.8
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
(Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6688S
FDD6688S
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDD6688 Rev C (W)