FDD6685_11 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrenchÒ MOSFET

May 2011
FDD6685
30V P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
• –40 A, –30 V. RDS(ON) = 20 mΩ @ VGS = –10 V
RDS(ON) = 30 mΩ @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Qualified to AEC Q101
D
G
S
G
S
TO-252
D
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed, PW ≤ 100µs (Note 1b)
PD
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
–30
±25
–40
–11
–100
52
3.8
1.6
–55 to +175
Units
V
V
A
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.9
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
°C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2011 Fairchild Semiconductor Corporation
FDD6685 Rev D1