FDD6680AS_08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench® SyncFET™

April 2008
FDD6680AS
tm
30V N-Channel PowerTrench^® SyncFET^™
General Description
Features
The FDD6680AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDD6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDD6680A in parallel with a
Schottky diode.
• 55 A, 30 V
R_DS(ON) max= 10.5 mΩ @ V_GS = 10 V
R_DS(ON) max= 13.0 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (21nC typical)
• High performance trench technology for extremely
low R_DS(ON)
Applications
• High power and current handling capability
• DC/DC converter
.
• Low side notebook
D
G
S
TO-252
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 3)
– Pulsed
(Note 1a)
Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6680AS
FDD6680AS
13’’
©2008 Fairchild Semiconductor Corporation
D
G
S
Ratings
30
±20
55
100
60
3.1
1.3
–55 to +150
Unit
s
V
V
A
W
°C
2.1
°C/W
40
°C/W
96
°C/W
Tape width
16mm
Quantity
2500 units
FDD6680AS Rev A1(X)