FDD6680A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel, Logic Level, PowerTrench MOSFET

February 2000
FDD6680A
N-Channel, Logic Level, PowerTrench^ MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• DC/DC converter
• Motor drives
Features
• 56 A, 30 V. R_DS(ON) = 0.0095 Ω @ V_GS = 10 V
R_DS(ON) = 0.0130 Ω @ V_GS = 4.5 V.
• Low gate charge ( 23nC typical ).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
D
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
(Note 1)
(Note 1a)
P_D
T_J, T_stg
Maximum Drain Current - Pulsed
Maximum Power Dissipation @ T_C = 25^oC
T_A = 25^oC
T_A = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ_JC
Thermal Resistance, Junction-to-Case
Rθ_JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
G
S
Ratings
30
±20
56
14
100
60
2.8
1.3
-55 to +150
2.1
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6680A
FDD6680A
13’’
2000 Fairchild Semiconductor Corporation
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD6680A, Rev. C