FDD6676S Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

December 2002
FDD6676S
30V N-Channel PowerTrench^® MOSFET
General Description
The FDS6676S is designed to replace a DPAK
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
Features
• 78 A, 30 V
RDS(ON) = 6.0 mΩ @ VGS = 10 V
RDS(ON) = 7.1 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676S
FDD6676S
13’’
D
G
S
Ratings
30
±16
78
100
70
3.1
1.3
–55 to +150
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDD6676S Rev D (W)