FDD6676AS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

April 2005
FDD6676AS
30V N-Channel PowerTrench^® SyncFET^™
General Description
The FDD6676AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDD6676AS
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode using
Fairchild’s monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
Features
• 90 A, 30 V
R_DS(ON) = 5.7 mΩ @ V_GS = 10 V
R_DS(ON) = 7.1 mΩ @ V_GS = 4.5 V
• Includes SyncFET schottky body diode
• Low gate charge (46nC typical)
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
D
G
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676AS
FDD6676AS
13’’
FDD6676AS
FDD6676AS_NL (Note 4)
13’’
©2005 Fairchild Semiconductor Corporation
Ratings
30
±20
90
100
70
3.1
1.3
–55 to +150
1.8
40
96
Tape width
12mm
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2500 units
FDD6676AS Rev A(X)