FDD6676 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

April 2001
FDD6676
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 78 A, 30 V
RDS(ON) = 7.5 mΩ @ VGS = 10 V
RDS(ON) = 8.5 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6676
FDD6676
13’’
D
G
S
Ratings
30
±16
78
100
83
3.8
1.6
-55 to +175
1.8
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDD6676 Rev C(W)