FDD6672A_01 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

April 2001
FDD6672A
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 65 A, 30 V.
RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
RDS(ON) = 8 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (33 nC typical)
• High power and current handling capability
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Maximum Power Dissipation @ TC = 25°C (Note 1)
@ TA = 25°C (Note 1a)
@ TA = 25°C (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6672A
FDD6672A
13’’
D
G
S
Ratings
30
±12
65
100
70
3.2
1.3
-55 to +150
1.8
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDD6672A Rev C (W)