FDD6670S Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

September 2001
FDD6670S
30V N-Channel PowerTrench^® SyncFET^™
General Description
The FDD6670S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDD6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6670S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6670A in parallel with a Schottky diode.
Applications
• DC/DC converter
• Motor Drives
Features
• 64 A, 30 V
R_DS(ON) = 9 mΩ @ V_GS = 10 V
R_DS(ON) = 12.5 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (17nC typical)
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
.
D
G
S
TO-252
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
T_J, T_STG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6670S
FDD6670S
13’’
©2001 Fairchild Semiconductor Corporation
D
G
S
Ratings
30
±20
64
100
70
3.2
1.3
–55 to +150
1.8
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
FDD6670S Rev E(W)