FDD6670A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel, Logic Level, PowerTrench MOSFET

February 2000
FDD6670A
N-Channel, Logic Level, PowerTrench^ MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• DC/DC converter
• Motor drives
Features
• 66 A, 30 V. R_DS(on) = 0.008 Ω @ V_GS = 10 V
R_DS(on) = 0.010 Ω @ V_GS = 4.5 V.
• Low gate charge (35nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(on).
D
D
G
S
TO-252
Absolute Maximum Ratings ^TC^{=25oC unless otherwise noted}
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
TA = 25^oC (Note 1a)
Maximum Drain Current -Pulsed
Maximum Power Dissipation
TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
G
S
Ratings
30
±²⁰
66
15
100
70
3.2
1.3
-55 to +150
1.8
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6670A
FDD6670A
13’’
2000 Fairchild Semiconductor Corporation
Tape width
16mm
Units
V
V
A
W
°^C
°^C/W
°^C/W
°^C/W
Quantity
2500
FDD6670A, Rev. C