FDD6637_10 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ

FDD6637_F085
P-Channel PowerTrench^® MOSFET
-35V, -21A, 18mΩ
Features
„ Typ r_DS(on) = 9.7mΩ at V_GS = -10V, I_D =- 14A
„ Typ r_DS(on) = 14.4mΩ at V_GS = -4.5V, I_D =- 11A
„ Typ Q_g(10) = 45nC at V_GS = -10V
„ High performance trench technology for extremely low
r_DS(on).
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Inverter
„ Power Supplies
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„
December 2010
©2010 Fairchild Semiconductor Corporation
1
FDD6637_F085 Rev. C
www.fairchildsemi.com