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FDD6637_06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 35V P-Channel PowerTrench MOSFET | |||
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August 2006
FDD6637
35V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductorâs proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
⢠Inverter
⢠Power Supplies
Features
⢠â55 A, â35 V RDS(ON) = 11.6 m⦠@ VGS = â10 V
RDS(ON) = 18 m⦠@ VGS = â4.5 V
⢠High performance trench technology for extremely
low RDS(ON)
⢠RoHS Compliant
D
D
G
S
DTO-P-2A5K2
(TO-252)
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
VDS(Avalanche)
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current
@TC=25°C
@TA=25°C
Pulsed
(Note 3)
(Note 1a)
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@ TA= 2 5 ° C
(Note 1a)
@ TA= 2 5 ° C
(Note 1b)
Operating and Storage Junction Temperature Range
â35
â40
±25
â55
â13
â100
57
3.1
1.3
â55 to +150
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.2
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size Tape width
FDD6637
FDD6637
D-PAK (TO-252)
13ââ
12mm
Units
V
V
V
A
W
°C
°C/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
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