FDD6637 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 35V P-Channel PowerTrench-R MOSFET

October 2005
FDD6637
35V P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
• Inverter
• Power Supplies
Features
• –55 A, –35 V R_DS(ON) = 11.6 mΩ @ V_GS = –10 V
R_DS(ON) = 18 mΩ @ V_GS = –4.5 V
• High performance trench technology for extremely
low R_DS(ON)
• RoHS Compliant
D
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
G
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_{DS(Avalanche)}
V_GSS
I_D
P_D
T_J, T_STG
Parameter
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 4)
Gate-Source Voltage
Continuous Drain Current @T_C=25°C
(Note 3)
@T_A=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@T_C=25°C
(Note 3)
@T_A=25°C
(Note 1a)
@T_A=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
–35
–40
±25
–55
–14
–100
57
3.8
1.6
–55 to +150
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.2
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size Tape width
FDD6637
FDD6637
D-PAK (TO-252)
13’’
12mm
Units
V
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDD6637 Rev C(W)
www.fairchildsemi.com