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| FDD6632 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mΩ | |||
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June 2002
FDD6632
N-Channel Logic Level UltraFET® Trench Power MOSFET
30V, 9A, 90mâ¦
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
⢠Fast switching
⢠rDS(ON) = 0.058⦠(Typ), VGS = 10V, ID = 9A
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
⢠rDS(ON) = 0.090⦠(Typ), VGS = 4.5V, ID = 6A
⢠Qg(TOT) (Typ) = 2.6nC, VGS = 5V
Formerly developmental type 83317
Applications
⢠DC/DC converters
⢠Qgd (Typ) = 0.8nC
⢠CISS (Typ) = 255pF
D
G
S
DTO-P-2A5K2
(TO-252)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
Power dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
Package Marking and Ordering Information
Device Marking
FDD6632
Device
FDD6632
Package
TO-252AA
Reel Size
330mm
Ratings
30
±20
9
6
4
Figure 4
15
0.1
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
10
oC/W
100
oC/W
52
oC/W
Tape Width
16mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDD6632 Rev. B
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