FDD6630A_11 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrenchÒ MOSFET

November 2011
FDD6630A
30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
• DC/DC converter
• Motor drives
Features
• 21 A, 30 V
RDS(ON) = 35 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 4.5 V
• Low gate charge (5nC typical)
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
.
D
G
S
TO-252
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
TJ, TSTG
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJ C
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6630A
FDD6630A
13’’
D
G
S
Ratings
30
±20
21
100
28
3.2
1.3
–55 to +175
4.5
40
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDD6630A Rev D1