FDD6630A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel PowerTrench™ MOSFET

FDD6630A
N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
Applications
• DC/DC converter
• Motor drives
July 1999
ADVANCE INFORMATION
Features
• 21 A, 30 V. R_DS(ON) = 0.035 Ω @ V_GS = 10 V
R_DS(ON) = 0.050 Ω @ V_GS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
D
G
S
TO-252
D
G
S
Absolute M aximum Ratings TC=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to- Case
R_θJA
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
Ratings
30
±20
21
7.6
100
28
3.2
1.3
-55 to +150
4.5
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6630A
FDD6630A
13’’
1999 Fairchild Semiconductor Corporation
Tape Width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
FDD6630A Rev. A