FDD6606 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

February 2004
FDD6606
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
Applications
• DC/DC converter
• Motor Drives
Features
• 75 A, 30 V
R_DS(ON) = 6 mΩ @ V_GS = 10 V
R_DS(ON) = 8 mΩ @ V_GS = 4.5 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely
low R_DS(ON)
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
D
G
S
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Ratings
30
± 20
75
100
71
3.8
1.6
–55 to +175
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.1
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
FDD6606
FDD6606
D-PAK (TO-252)
Reel Size
13’’
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDD6606 Rev B (W)