FDD6030BL Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel PowerTrenchTM MOSFET

FDD6030BL
N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-
state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Motor drives
April 1999
ADVANCE INFORMATION
Features
• 35 A, 30 V. R_DS(ON) = 0.018 Ω @ V_GS = 10 V
R_DS(ON) = 0.025 Ω @ V_GS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
D
D
G
G
S
TO-252
Absolute Maximum Ratings ^TC^{=25oC unless otherwise noted}
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
S
Ratings
30
±20
35
9
100
44
2.8
1.3
-55 to +150
2.8
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD6030BL
FDD6030BL
13’’
Tape width
16mm
©1999 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD6030BL Rev. A