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FDD5N60NZTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm
March 2013
FDD5N60NZ
N-Channel UniFETTM II MOSFET
600 V, 4.0 A, 2 
Features
• RDS(on) = 1.65  (Typ.) @ VGS = 10 V, ID = 2.0 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on advanced planar stripe and DMOS tech-
nology. This advanced MOSFET family has the smallest on-state
resistance among the planar MOSFET, and also provides superior
switching performance and higher avalanche energy strength. In
addition, internal gate-source ESD diode allows UniFET II MOSFET
to withstand over 2kV HBM surge stress. This device family is suit-
able for switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and elec-
tronic lamp ballasts.
D
D
G
G
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD5N60NZ
600
±25
4.0
2.4
16
216
4.0
8.3
10
83
0.7
-55 to +150
300
FDD5N60NZ
1.5
90
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
1
FDD5N60NZ Rev. C0
www.fairchildsemi.com
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