FDD5N50NZF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 500V, 3.7A, 1.75Ω

FDD5N50NZF
N-Channel MOSFET
500V, 3.7A, 1.75Ω
Features
• R_DS(on) = 1.47Ω ( Typ.)@ V_GS = 10V, I_D = 1.85A
• Low Gate Charge ( Typ. 9nC)
• Low C_rss ( Typ. 4pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
February 2012
UniFET-II^TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
D
G
G
S
D-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD5N50NZF
500
±25
3.7
2.2
14
165
3.3
6.25
20
62.5
0.5
-55 to +150
300
FDD5N50NZF
2
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDD5N50NZF Rev. C0
www.fairchildsemi.com