FDD5N50 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 500V, 4A, 1.4Ω

FDD5N50
N-Channel MOSFET
500V, 4A, 1.4Ω
Features
• R_DS(on) = 1.15Ω ( Typ.)@ V_GS = 10V, I_D = 2A
• Low gate charge ( Typ. 11nC)
• Low C_rss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFET^TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
D
D
G
S
D-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
S
Ratings
500
±30
4
2.4
16
256
4
4
4.5
40
0.3
-55 to +150
300
Ratings
1.4
110
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2007 Fairchild Semiconductor Corporation
1
FDD5N50 Rev. A
www.fairchildsemi.com