FDD5690_02 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench® MOSFET

December 2002
FDD5690
60V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
Features
• 30 A, 60 V. R_DS(ON) = 0.027Ω @ V_GS = 10 V
R_DS(ON) = 0.032 Ω @ V_GS = 6 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
D
D
G
G
S
TO-252
Absolute Maximum Ratings
TC=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to- Case
R_θJA
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1a)
(Note 1b)
S
Ratings
60
±20
30
9
100
50
3.2
1.3
-55 to +150
2.5
40
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5690
FDD5690
13’’
Tape width
16mm
2002 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500
FDD5690, Rev. C