FDD5680 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel, PowerTrench™ MOSFET

July 2000
FDD5680
N-Channel, PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• DC/DC converter
• Motor drives
Features
• 38 A, 60 V. R_DS(on) = 0.021 Ω @ V_GS = 10 V
R_DS(on) = 0.025 Ω @ V_GS = 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(on).
D
D
G
G
S
TO-252
Absolute Maximum Ratings ^TA^{=25oC unless otherwise noted}
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximun Drain Current - Continuous
(Note 1)
(Note 1a)
Maximum Drain Current
- Pulsed
Maximum Power Dissipation @ T_C = 25^oC (Note 1)
T_A = 25^oC (Note 1a)
T_A = 25^oC (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
S
Ratings
60
±²⁰
38
8.5
100
60
2.8
1.3
-55 to +150
2.1
96
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5680
FDD5680
13’’
2000 Fairchild Semiconductor International
Tape width
16mm
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
2500
FDD5680, Rev. C