FDD5670 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrenchTM MOSFET

March 1999
ADVANCE INFORMATION
FDD5670
60V N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 48 A, 60 V. R_DS(ON) = 0.015 Ω @ V_GS = 10 V
R_DS(ON) = 0.018 Ω @ V_GS = 6 V.
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
D
D
G
S
TO-252
G
S
Absolute Maximum Ratings TC=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
P_D
T_J, T_stg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ T_C = 25^oC
T_A = 25^oC
T_A = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ_JC
Thermal Resistance, Junction-to- Case
Rθ_JA
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5670
FDD5670
13’’
©1999 Fairchild Semiconductor Corporation
Ratings
60
±20
48
10
100
70
2.8
1.3
-55 to +150
1.8
96
Tape width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD5670 Rev. A