FDD5614P_05 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 60V P-Channel PowerTrench® MOSFET

May 2005
FDD5614P
60V P-Channel PowerTrench^® MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. R_DS(ON) = 100 mΩ @ V_GS = –10 V
R_DS(ON) = 130 mΩ @ V_GS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
D
G
S
TO-252
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5614P
FDD5614P
13’’
S
G
D
Ratings
–60
±20
–15
–45
42
3.8
1.6
–55 to +175
3.5
40
96
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDD5614P Rev C1(W)