FDD5612 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench™ MOSFET

July 1999
ADVANCE INFORMATION
FDD5612
60V N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
This MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable R_DS(ON)
specifications. The result is a MOSFET that is easier to
drive, even at very high frequencies, and DC/DC power
supply designs with higher overall efficiency.
Applications
• DC/DC converter
• Motor drives
Features
• 19 A, 60 V. R_DS(ON) = 0.055 Ω @ V_GS = 10 V
R_DS(ON) = 0.064 Ω @ V_GS = 6 V.
• Optimized for use in high frequency DC/DC converters.
• Low gate charge.
• Very fast switching.
D
D
G
S
TO-252
G
S
Absolute Maximum Ratings TC=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
PD
TJ, Tstg
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ TC = 25^oC
TA = 25^oC
TA = 25^oC
(Note 1)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Case
R_θJC
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDD5612
FDD5612
13”
1999 Fairchild Semiconductor Corporation
Ratings
60
±20
19
6
100
36
3.2
1.3
-55 to +150
3.5
40
96
Tape Width
16mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500
FDD5612 Rev. A