FDD5353 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 60V, 50A, 12.3mΩ

March 2008
FDD5353
tm
N-Channel Power Trench^® MOSFET
60V, 50A, 12.3mΩ
Features
General Description
„ Max r_DS(on) = 12.3mΩ at V_GS = 10V, I_D = 10.7A
„ Max r_DS(on) = 15.4mΩ at V_GS = 4.5V, I_D = 9.5A
„ 100% UIL Tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ RoHS Compliant
Application
„ Inverter
„ Synchronous rectifier
„ Primary switch
G
S
D
D_{T O}- P_-2A₅K₂
(TO-252)
D
G
S
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C = 25°C
T_C = 25°C
T_A = 25°C
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
54
11.5
100
253
69
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.8
(Note 1a)
40
°C/W
Device Marking
FDD5353
Device
FDD5353
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDD5353 Rev.C
www.fairchildsemi.com