FDD4N60NZ_12 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET 600V, 3.4A, 2.5

FDD4N60NZ
N-Channel MOSFET
600V, 3.4A, 2.5Ω
Features
• R_DS(on) = 1.9Ω ( Typ.)@ V_GS = 10V, I_D = 1.7A
• Low Gate Charge ( Typ. 8.3nC)
• Low C_rss ( Typ. 3.7pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
July 2012
UniFET-II ^TM
Description
These N-Channel enhancement mode power field effect tran-
sistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching per-
formance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
D
G
S
D-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD4N60NZ
600
±25
3.4
2
13.6
179.2
3.4
11.4
5
114
0.9
-55 to +150
300
FDD4N60NZ
1.1
110
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDD4N60NZ Rev.C0
www.fairchildsemi.com