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| FDD4N60NZ Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 | |||
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March 2013
FDD4N60NZ
N-Channel UniFETTM II MOSFETï
600 V, 3.4 A, 2.5 ï
Features
⢠RDS(on) = 1.9 ï (Typ.) @ VGS = 10 V, ID = 1.7 A
⢠Low Gate Charge (Typ. 8.3 nC)
⢠Low Crss (Typ. 3.7 pF)
⢠100% Avalanche Tested
⢠Improved dv/dt Capability
⢠ESD Improved Capability
⢠RoHS Compliant
Applications
Description
UniFETTM II MOSFET is Fairchild Semiconductor娉s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFETTM II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
⢠LCD/LED/PDP TV
⢠Lighting
⢠Uninterruptible Power Supply
D
D
G
G
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD4N60NZ
600
±25
3.4
2
13.6
179.2
3.4
11.4
5
114
0.9
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
Rï±JC
Rï±JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation
1
FDD4N60NZ Rev. C0
FDD4N60NZ
1.1
110
Unit
oC/W
www.fairchildsemi.com
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