FDD4243 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm

FDD4243
40V P-Channel PowerTrench^® MOSFET
-40V, -14A, 44mΩ
Features
General Description
November 2006
„ Max r_DS(on) = 44mΩ at V_GS = -10V, I_D = -6.7A
„ Max r_DS(on) = 64mΩ at V_GS = -4.5V, I_D = -5.5A
„ High performance trench technology for extremely low r_DS(on)
„ RoHS Compliant
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench^® technology to
deliver low r_DS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications.
Application
„ Inverter
„ Power Supplies
G
S
D
D_{T O}- P_-2A₅K₂
(TO-252)
S
G
D
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
T_C= 25°C
T_C= 25°C
T_A= 25°C
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T_C= 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-40
±20
-14
-24
-6.7
-60
84
42
3
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
3.0
(Note 1a)
40
°C/W
Device Marking
FDD4243
Device
FDD4243
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDD4243 Rev.C
www.fairchildsemi.com