FDD390N15ALZ Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150V, 26A, 42mΩ

March 2012
FDD390N15ALZ
N-Channel PowerTrench^® MOSFET
150V, 26A, 42mΩ
Features
• R_DS(on) = 33.4mΩ ( Typ.) @ V_GS = 10V, I_D = 26A
• R_DS(on) = 42.2mΩ ( Typ.) @ V_GS = 4.5V, I_D = 20A
• Fast Switching Speed
• Low gate charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
D
D
G
GS
D-PAK
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
S
(Note 1)
(Note 2)
(Note 3)
Rating
150
±20
26
17
104
96
13
63
0.5
-55 to +150
300
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Min.
-
-
Max.
2.0
87
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDD390N15ALZ Rev.C1
www.fairchildsemi.com